Article Details

Short Channel Effects In Nanoscale Fully Depleted Double-Gate Soi Mosfets |

Meenakshi Gupta, Dr. K. L. Jaat, in Journal of Advances in Science and Technology | Science & Technology


In this paper is discussed how the short channel behaviorin sub 100nm channel range can be improved by inducing a step Surface potentialprofile  at the back gate of anasymmetrical double gate (DG) silicon-on –insulator (SOI) metal-oxide –semiconductor  field-effect-transistor  (MOSFET) in which the front gate consists of two materials with different workfunction.’