Epitaxy and Epitaxial Growth Methods
Advancements and Applications
by Anita Rani*,
- Published in Journal of Advances and Scholarly Researches in Allied Education, E-ISSN: 2230-7540
Volume 16, Issue No. 6, May 2019, Pages 783 - 784 (2)
Published by: Ignited Minds Journals
ABSTRACT
Epitaxy, widely used in bipolar ICs, is the arrangement of the atoms upon a crystalline substrate to form a continuous extension of the crystal structure. The resulting layer appears as an extension of the substrate. The atoms of the layer arrange themselves along the existing planes of the crystalline substrate and form bond with parent atoms. In Epitaxy, a thin film of single crystal silicon is grown on the crystal of same material in vapour phase. It enhances the performance of bipolar transistors. The epitaxial layer is a high resistivity layer grown on low resistivity substrate in bipolar ICs. Epitaxy also improves the performance of Dynamic RAMs anf CMOS ICs. It allows control over the doping profile. Epitaxial layers are generally free from carbon and oxygen. The various types of epitaxy are.
KEYWORD
Epitaxy, Epitaxial Growth Methods, bipolar ICs, atoms, crystalline substrate, continuous extension, thin film, single crystal silicon, vapour phase, performance
