Epitaxy and Epitaxial Growth Methods

Advancements and Applications

Abstract

Epitaxy, widely used in bipolar ICs, is the arrangement of the atoms upon a crystalline substrate to form a continuous extension of the crystal structure. The resulting layer appears as an extension of the substrate. The atoms of the layer arrange themselves along the existing planes of the crystalline substrate and form bond with parent atoms.In Epitaxy, a thin film of single crystal silicon is grown on the crystal of same material in vapour phase. It enhances the performance of bipolar transistors. The epitaxial layer is a high resistivity layer grown on low resistivity substrate in bipolar ICs. Epitaxy also improves the performance of Dynamic RAMs anf CMOS ICs. It allows control over the doping profile. Epitaxial layers are generally free from carbon and oxygen. The various types of epitaxy are.