To Synthesize Multilayered Nanowires for Selective Device Application
Exploring the Potential of Multilayered Nanowires for Advanced Device Applications
Keywords:
nanowires, multilayered, selective device application, semiconductor materials, silicon, germanium, nanosilicon, lithography designing, top-down approach, base up way, nano science, inorganic semiconductor, dual, ternary, and quaternary semiconductors, SiNW heterostructures, complexity, functionalityAbstract
Nanowires are based up on a flat substrate of semiconductor materials, such as silicon and germanium. Nanowires are simply very tiny wires. Silicon nanowires (SiNWs) and nanowire heterostructure are remarkable type of nanosilicon, that are developed by direct combination as opposed to traditional lithography designing (top-down) approach. Here we survey key propels in SiNWs and SiNW heterostructures empowered by the base up way to deal with nano science. This article is dedicated to peddling ongoing progress on the improvement the gadget applications that utilization inorganic semiconductor nanowires of different arrangements from essential semiconductors, e.g, Si and Ge, to double, ternary and quaternary semiconductors. Last, we talk about SiNW heterostructures, which open up new and frequently exceptional elements of intricacy and usefulness.Published
2018-12-01
How to Cite
[1]
“To Synthesize Multilayered Nanowires for Selective Device Application: Exploring the Potential of Multilayered Nanowires for Advanced Device Applications”, JASRAE, vol. 15, no. 12, pp. 657–665, Dec. 2018, Accessed: Jun. 27, 2025. [Online]. Available: https://ignited.in/index.php/jasrae/article/view/9325
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Articles
How to Cite
[1]
“To Synthesize Multilayered Nanowires for Selective Device Application: Exploring the Potential of Multilayered Nanowires for Advanced Device Applications”, JASRAE, vol. 15, no. 12, pp. 657–665, Dec. 2018, Accessed: Jun. 27, 2025. [Online]. Available: https://ignited.in/index.php/jasrae/article/view/9325