A Review About Cmos Technology Procedure to Development Connected With Ultra-Wideband Low Noise Amplifier

An Investigation into the Development of an Ultra-Wideband Low Noise Amplifier using Cmos Technology Procedure

Authors

  • Vinay Kumar Monad University Author

Keywords:

Cmos technology procedure, Development, Connected, Ultra-Wideband, Low Noise Amplifier, Configuration, Transfer speed, Broadens, Symmetric 3d Rf mixed inductor, Addition, Nf, Data, Yield impedance matching, Confinement, Working frequency band, 1.8 V supply, TSMC 0.18 CMOS engineering procedure

Abstract

This paper presents the configuration of ultra-widebandlow noise amplifier (UWB LNA). The proposed UWB LNA whose transfer speedbroadens from 2.5 Ghz to 16 Ghz is planned utilizing a symmetric 3d Rf mixedinductor. This UWB LNA has an addition of 11 ± 1.0 db and a Nf less than 3.3db. Great data and yield impedance matching and exceptional confinement areaccomplished over the working recurrence band. The proposed UWB LNA isdetermined from a 1.8 V supply. The UWB LNA is composed and recreated instandard TSMC 0.18  CMOSengineering procedure.

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Published

2013-02-01

Issue

Vol. 4 No. 8 (2013): Journal of Advances in Science and Technology (JAST)

Section

Articles