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Authors

Neha Yadav

Dr. Ram Nihor

Abstract

Quantum materials, optoelectronics, and semiconductor physics have all benefited from molecular beam epitaxy (MBE), a powerful tool for the precise fabrication of nanostructures. This research goes over the latest findings in electrical characterisation and structural elucidation of MBE-generated nanostructures. Thanks to improved characterisation techniques including high-resolution transmission electron microscopy (HRTEM), scanning tunnelling microscopy (STM), and X-ray diffraction (XRD), our understanding of atomic-scale structures, defects, and interfaces has expanded substantially. Hall effect measurements, conductive atomic force microscopy (c-AFM), and transport spectroscopy are some of the electrical characterisation methods that have helped to clarify electronic band structures, quantum confinement effects, and charge carrier dynamics. Through the integration of exact growth control and advanced characterisation techniques, novel materials with tailored electrical properties have been synthesised. This study focusses on the latest advancements, challenges, and possible future directions of MBE in quantum computing and next-generation nanoelectronics.

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