A Review About Cmos Technology Procedure to Development Connected With Ultra-Wideband Low Noise Amplifier

A Study on the Configuration and Performance of CMOS Ultra-Wideband Low Noise Amplifier

Authors

  • Ankita Shukla CMJ University Author

Keywords:

CMOS technology, ultra-wideband, low noise amplifier, configuration, transfer speed, broadens, 3d Rf mixed inductor, addition, Nf, data, impedance matching, confinement, 1.8 V supply, TSMC 0.18 CMOS engineering procedure

Abstract

Thispaper presents the configuration of ultra-wideband low noise amplifier (UWBLNA). The proposed UWB LNA whose transfer speed broadens from 2.5 Ghz to 16 Ghzis planned utilizing a symmetric 3d Rf mixed inductor. This UWB LNA has anaddition of 11 ± 1.0 db and a Nf less than 3.3 db. Great data and yieldimpedance matching and exceptional confinement are accomplished over theworking recurrence band. The proposed UWB LNA is determined from a 1.8 Vsupply. The UWB LNA is composed and recreated in standard TSMC 0.18  CMOSengineering procedure.

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Published

2012-05-01

Issue

Vol. 3 No. 5 (2012): Journal of Advances in Science and Technology (JAST)

Section

Articles