Short Channel Effects In Nanoscale Fully Depleted Double-Gate Soi Mosfets

Enhancing Short Channel Behavior in Nanoscale MOSFETs using Asymmetrical Double-Gate SOI Technology

Abstract

In this paper is discussed how the short channel behaviorin sub 100nm channel range can be improved by inducing a step Surface potentialprofile  at the back gate of anasymmetrical double gate (DG) silicon-on –insulator (SOI) metal-oxide –semiconductor  field-effect-transistor  (MOSFET) in which the front gate consists of two materials with different workfunction.’